Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
March 1, 1984IEEE Transactions on Microwave Theory and Techniques

A Packaged 20-GHz 1-W GaAs MESFET with a Novel Via-Hole Plated Heat Sink Structure

View Full Paper
Ask AI
Bookmark
Share

Authors

YHYasutake HirachiTokyo Institute of TechnologyYTYusuke TakeuchiPanasonic (Japan)MIMiwa Igarashi

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Hirachi et al. (1984) studied this question.

synapsesocial.com/papers/6a928fc2363ee85fa149f91dhttps://doi.org/10.1109/tmtt.1984.1132670
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Reliability of power GaAs field-effect transistors1982 · 31 citations
  2. 2GaAs microwave power FET1976 · 49 citations
  3. 3Broad-Band Internal Matching of Microwave Power GaAs MESFET's1979 · 22 citations