We report on the synthesis of a novel optoelectronic material, Sn-rich Ge 1– x Sn x nanocrystals in a Ge matrix. The nanocrystals have been formed after annealing of a metastable Ge-rich Ge 1– y Sn y film, which was embedded in the Ge matrix. Electron microscopy investigations have revealed that these nanocrystals possess two lattice types: (i) a diamondlike cubic structure with a high Sn fraction ( x > 0.5) and (ii) an ordered zincblende structure ( x = 0.5).
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Tonkikh et al. (2014) studied this question.
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