Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

Gordon Grzybowski; Richard T. Beeler; Liying Jiang; David J. Smith; J. Kouvetakis; J. Menéndez

doi:10.1063/1.4745770

August 13, 2012Applied Physics Letters

Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

View at Publisher

Ask AI

Bookmark

Share

Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation G. Grzybowski, R. T. Beeler, L. Jiang, D. J. Smith, J. Kouvetakis, J. Menéndez; Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission. Appl. Phys. Lett. 13 August 2012; 101 (7): 072105. https://doi.org/10.1063/1.4745770 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search

Discussion

No takes yet. Share an insight, caveat, or question.

Cite This Study

Grzybowski et al. (2012) studied this question.

synapsesocial.com/papers/6a928fc5030f5598b7979b91 https://doi.org/10.1063/1.4745770

View at Publisher

Ask AI

Bookmark

Share

Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

Abstract

Discussion

Cite This Study

Next generation of Ge1−ySny (y = 0.01-0.09) alloys grown on Si(100) via Ge3H8 and SnD4: Reaction kinetics and tunable emission

Abstract

Discussion

Cite This Study

Keep reading

More from Applied Physics Letters

Keep reading

More from Applied Physics Letters