Single-crystalline Ge_1-x_-ySixSny alloys on Si (100) grown by magnetron sputtering

Magnetron sputtering was successfully used to grow single-crystalline Ge1-x-ySixSny ternary alloys on Si (100) substrates. The lattice constants of the alloys were calculated by X-ray diffraction and corrected Vegard’s law, respectively, showing that the corrected Vegard’s law is suitable for the Ge1-x-ySixSny lattice constants. Thermal stability investigations showed that the Ge0.85Si0.051Sn0.099 alloy was stable at 500 °C. The Ge1-x-ySixSny can maintain good crystalline quality under moderate annealing temperature, with no indication of phase segregation or Sn precipitation. Optical absorption measurements were carried out at room temperature to determine the band gap energies of the Ge1-x-ySixSny alloys. These results suggest that magnetron sputtering is an effective alternative method to grow Ge1-x-ySixSny alloys for fabrication of novel devices.