The electrical properties of thin film structures consisting of metal-insulator-meta sandwiches are investigated. Results for current-voltage characteristics, forming effects, temperature dependence of conductance, and the emission of electrons into n vacuum are described, particularly for the structure Cu-SiO/B2O3-Cu. Very high emission current densities are achieved for low applied voltages and with the cathode at or near room temperature. High values of hot electron attenuation length in both the copper electrode and in the insulator are obtained and the significance) of those high values is discussed.
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Bidadi et al. (1974) studied this question.
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