Answers are grounded in this paper and cite their sources.
Planar InP/In0.53Ga0.47As photodiodes with boro-phospho-silicate glass (BPSG) layers as a Zn-diffusion mask and as an InP surface p-n junction passivant exhibit stable, reverse-bias leakage-current characteristics at 220 °C for more than 104 h. Based on these results, estimates of the time required for the leakage current at 70 °C to saturate at 10 nA is, in the worst case considered, about 33 years. As a passivant and diffusion mask, BPSG compares favorably with silicon nitride.
No takes yet. Share an insight, caveat, or question.
Martinelli et al. (1988) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: