Theoretical investigation of minority carrier leakages of high-power 0.8 μm InGaAsP/InGaP/GaAs laser diodes

We report a theoretical model that accurately describes the effects of minority carrier leakage from the InGaAsP waveguide into InGaP cladding layers in high-power aluminum-free 0.8 μm InGaAsP/InGaP/GaAs separate confinement heterostructure lasers. Current leakage due to the relatively low band-gap discontinuity between the active region and the InGaP barrier can be eliminated by employing laser diodes with cavity length longer than 500 μm. Experimental results for lasers grown by low-pressure metalorganic chemical vapor deposition are in excellent agreement with the theoretical model.