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A vidicon target of a p-i-n structure has been fabricated using amorphous silicon prepared by a rf glow discharge of silane (SiH4). A thin layer of n-type a-silicon doped with phosphorus was provided between a photosensitive layer and a substrate coated with a transparent electrode (SnO2:Sb) to prohibit injection of holes. An excellent photoresponse was attained for visible light.
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Shimizu et al. (1980) studied this question.
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