A mechanism of current flow in an alloyed ohmic In contact to low-doped gallium arsenide ( n = 4 × 10 15 cm −3 ) is studied. From the temperature dependence of the contact resistance per unit surface area, it is found that the basic mechanism of current flow is thermionic emission through a potential barrier 0.03 eV in height.
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Blank et al. (2007) studied this question.
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