Improvements in optical and electrical properties were observed after ruthenium passivation of gallium antimonide surfaces. On passivation, luminescence efficiency increased up to 50 times and surface state density reduced by two orders of magnitude. Also, the reverse leakage current was found to decrease by a factor of 30–40 times. Increase in carrier mobility as a result of grain boundary passivation in polycrystalline GaSb was observed.
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Dutta et al. (1995) studied this question.
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