Lattice Location of 15N Atoms in SiC Analyzed by Nuclear Resonant Reaction

The nuclear resonant reaction 15 N(p, αγ)12 C and channeling effect of proton beams have been applied to the study of the lattice location of ion-implanted 15N atoms to a dose of 1×1016 15N2 +/cm2 at an energy of 100 keV in 6H-SiC. The structural recovery of the damaged layer has also been studied by the conventional Rutherford backscattering technique combined with channeling effect measurements. Elevated-temperature implantation, in particular, at above 1000° C, facilitates substitution of the 15N atoms into the SiC lattice sites as well as implantation-induced-damage reduction of the SiC host crystal. Postimplantation annealing (at 1300° C) promotes the recovery of the damaged layer. However, it does not promote the substitution of 15N atoms.