Implications in the use of sputtering for layer removal: the system Au on Si

Au films deposited on Si substrates have been sputtered by 20 and 100 keV Ar bombardment, respectively. Bombardment-induced intermixing of Au and Si was observed at film thicknesses considerably larger than the projectile range. Due to radiation-enhanced diffusion, the partial sputtering yield of Au from Si-Au alloys decreases with increasing fluence. Complete removal of Au from Si is impossible if Ar ions are used for sputtering.