New SiH IR bands in neutron-irradiated silicon grown in hydrogen atmosphere

The IR absorption spectra of neutron-irradiated and transmutation doped FZ(H2)Si annealed from RT to 700 °C are studied in the 1800 to 2300 cm−1 wave number range. Some new SiH IR bands such at 2016, 1984, 1867, and 1836 cm−1, and a strong and wide even-head IR band in the 2050 to 2150 cm−1 range are reported. The results show that besides the 2162 cm−1 band there are other SiH IR bands corresponding to the hydrogen-defect complex shallow donor. These new phenomena are discussed on the basis of the change of state of hydrogen with annealing temperature and the interaction between hydrogen and neutron radiation defects.