The Nature of Two Intense Si–H IR Stretching Bands in FZ‐Si:H

Based on the isotope effect, two H‐defect complexes: tetrahedral interstitial silane (SiH4)Td and hydrogenated 〈100〉 split interstitials (Isp · 2 H) are proposed to account for the two strong Si–H IR stretching bands in FZ‐Si grown in H atmosphere (2210 cm−1, 1946 cm−1). A series of experimental facts, including the vibration frequency, the correlation with Si–H IR bands in the bending‐wagging region, the temperature dependence of band‐width and the annealing behaviour are presented, which support the proposed model. The results coincide with the view that the self‐interstitial is the dominate thermal defect in crystalline silicon at high temperature.