The exodiffusion of hydrogen in dislocated crystalline silicon

Deformed silicon specimens with dislocation densities of the order of 109 cm−2 are hydrogenated in an RF-plasma. The binding energies of hydrogen at defects are evaluated from the effusion kinetics in a linear temperature scan between 300 and 800 °C. Combining these measurements with annealing treatments prior to hydrogenation allows to distinguish different kinds of defects. Three of the observed effusion peaks can be associated with dislocation cores and at least one peak with deformation produced EPR-active point defects. The binding energy at these defects is comparable to that of tightly bound hydrogen in amorphous Si while the bonds at dislocations are 0.5 to 1 eV weaker.