A simple model is developped to relate the valence electron number to the dispersion energy Ed and the static dielectric constant ϵ(0). This model is applied to hydrogenated amorphous silicon films prepared by glow discharge decomposition of silane. It is shown that the variation of valence electron number and anion valency explain the variation of the dispersion energy. This model allows to determine the hydrogen concentration in a‐Si:H films from two spectroscopic parameters Ed and ϵ(0).
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Ance et al. (1982) studied this question.
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