Epitaxial growth of 6H SiC in the temperature range 1320–1390°C

High-quality epitaxial layers of 6H SiC have been grown on 6H SiC substrates with the growth direction perpendicular to the crystal c axis. The growth was by chemical vapor deposition from methyltrichlorosilane (CH3SiCl3) in hydrogen. Epitaxial layers up to 80 μm thick were grown at rates of 0.4 μm/min. Attempts at growth on the (0001) plane of 6H SiC substrates under similar conditions resulted in polycrystalline cubic SiC layers. Optical and x-ray diffraction techniques were used to characterize the grown layers.