The stability of various crystallographic phases (3C, 4H, 15R, 6H, etc.) of silicon carbide has been discussed. Based on existing informations and on recent experimental evidences, a more rigorous treatment to the origin of polytypic structures in SiC has been presented. The formation of new series of polytypes based on (34) and (3332) structure units and the results of X-ray diffraction studies of about 500 SiC single crystals have been reported.
No takes yet. Share an insight, caveat, or question.
Dubey et al. (1973) studied this question.