Process dependence of H passivation and doping in H-implanted ZnO

We used depth-resolved cathodoluminescence spectroscopy (DRCLS), photoluminescence (PL) spectroscopy and temperature-dependent Hall-effect (TDHE) measurements to describe the strong dependence of H passivation and doping in H-implanted ZnO on thermal treatment. Increasing H implantation dose increases passivation of Zn and oxygen vacancy-related defects, while reducing deep level emissions. Over annealing temperatures of 100–400 °C at different times, 1 h annealing at 200 °C yielded the lowest DRCLS deep level emissions, highest TDHE carrier mobility, and highest near band-edge PL emission. These results describe the systematics of dopant implantation and thermal activation on H incorporation in ZnO and their effects on its electrical properties.