Large time-independent conduction fluctuations were observed as a function of transverse electric field in thin (25 nm) and narrow (60 nm) bismuth wires. The conduction of leads far away from a gate capacitor was influenced by changes in the gate voltage. The effects are interpreted as being due to a variation in the Fermi wavelength caused by gate-induced changes in the charge concentration of the leads rather than an electrostatic Aharonov-Bohm-type interference. The screening of charge is strongly reduced in narrow wires.
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Petrashov et al. (1991) studied this question.
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