Electronic Structure of Sb and Its Dependence on Hydrostatic Pressure

High‐accuracy computer calculations of the electronic structure of Sb and of its pressure dependence up to 20 kbar are reported. Calculations are performed in the framework of the Falicov‐Lin pseudo‐potential method. Accuracies of calculations of cross sections of the energy surface and of corresponding energy levels are improved up to few per cents and 10−4 to 10−5 Hartrees, respectively. This results in a coincidence between the calculated and observed pressure dependences of the electronic structure of Sb. Basic results of calculations, comparison with experimental data, and a discussion are presented.