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The channeling effect on electron induced characteristic x-ray emission has been used to study the site occupancy of As in submicron regions of Si (3×1019 As atoms cm−3). We report here the first absolute intensity measurements of the crystallographic orientation dependence of characteristic x-ray production by kilovolt electrons in order to determine quantitatively the crystal site occupancy of an impurity.
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Taftø et al. (1983) studied this question.
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