Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
January 26, 2016ACS PhotonicsOpen Access

Lasing from Glassy Ge Quantum Dots in Crystalline Si

View Full Paper
Ask AI
Bookmark
Share

Authors

MGMartyna GrydlikJohannes Kepler University of LinzFHFlorian HacklLahey Medical CenterHGHeiko GroißJohannes Kepler University of Linz

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Grydlik et al. (2016) studied this question.

synapsesocial.com/papers/6a92b3ba29f7ca37161f716ahttps://doi.org/10.1021/acsphotonics.5b00671
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1High performance continuous wave 1.3 <i>μ</i>m quantum dot lasers on silicon2014 · 338 citations
  2. 2Band alignments and photon-induced carrier transfer from wetting layers to Ge islands grown on Si(001)2001 · 83 citations
  3. 3Silicon-based light emitters fabricated by embedding Ge self-assembled quantum dots in microdisks2007 · 44 citations
  4. 4Excitation Intensity Driven PL Shifts of SiGe Islands on Patterned and Planar Si(001) Substrates: Evidence for Ge-rich Dots in Islands2010 · 26 citations
  5. 5Dislocation-free Stranski-Krastanow growth of Ge on Si(100)1990 · 1,982 citations