The variation of As+Ga content during illumination in weakly electron-irradiated semi-insulating GaAs is analyzed in terms of the pertinent parameters of the midgap donor EL2, leading to a determination of the total content of photoquenchable anion antisites independent of initial paramagnetic fraction. The associated photocarrier release is used for modeling the corresponding variation of the concentration of neutralized ST1 acceptors in a scheme involving one donor and two competing acceptor levels.
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Christoffel et al. (1989) studied this question.
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