The response of the EL2 absorption band to monochromatic secondary illumination has been studied in undoped semi-insulating GaAs. Photoinduced changes of the absorption band are spectrally nonuniform. In addition, the changes are nonmonotonic in time similar to the EL2 photocapacitance transients: A fast enhancement in absorption is followed by a slow quenching. These data can be explained in terms of the EL2 properties known from photocapacitance studies. A comparison with recent electron paramagnetic resonance (EPR) results for the AsGa antisite provides direct evidence that the EL2 absorption band and the As+Ga EPR are induced by the same defect.
No takes yet. Share an insight, caveat, or question.
Dischler et al. (1986) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: