The photoresponses of the antisite defect AsGa + electron paramagnetic resonance signal have been investigated in as-grown, undoped, semi-insulating GaAs crystals grown from melts of different As atoms fractions. The observed photoresponses are well explained by assumting that the AsGa antisite and the deep donor EL2 have identical photoionization cross sections and their concentrations exhibit the same dependence on melt stoichiometry. We have also reported the first observation of an extra singlet superimposed on the third component of the AsGa + quadruplet in as-grown GaAs. The photoresponse of the singlet is very different from that of the AsGa + quadruplet.
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Tsukada et al. (1985) studied this question.
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