Photoexcitation-electron-paramagnetic-resonance (photo-EPR) studies were performed on p-type 4H-SiC irradiated with 2.5 MeV electrons. At W-band frequencies (∼95 GHz) different EPR spectra could be well separated, allowing a reliable determination of the ground state levels of the associated defects. The photo-EPR results obtained for the positively charged carbon vacancy (VC+) can be explained by a deep donor model with the (+/0) level located at (1.47±0.06) eV above the valence band.
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Són et al. (2002) studied this question.
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