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This paper describes a highly efficient class‐E power amplifier. The design has been carried out at 1 GHz using a LDMOS transistor with 10 W of peak envelope power (PEP). Drain efficiency of 76.1%, power‐added efficiency (PAE) of 73.6%, and gain of 14.8 dB are achieved at an output power of 39.1 dBm for a continuous wave (CW) signal.
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Lee et al. (2006) studied this question.
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