Doping the waveguide core ( p=2×1017 cm−1) in asymmetric-waveguide InGaAs/InGaAsP, two-quantum-well diode lasers (λ=980 nm) raises the injection efficiency to 90% and decreases the threshold-current density, Jth. For 2 mm long, 100 µm wide stripe, uncoated chips Jth decreases from ∼188 A/cm2 to ∼150 A/cm2. High characteristic temperatures for Jth and the slope efficiency are obtained: T0=215K and T1=600K.
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Lee et al. (2003) studied this question.
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