X-ray photoemission spectroscopy is used to measure the valence-band offset {Δ}Eᵥ for in situ molecular-beam-epitaxy--grown heterojunctions involving AlAs, GaAs, and Ge. Commutativity is found by the equivalence of the Al(2p)-Ga(3d) energy separation (54.65±{}0.05 eV) for the AlAs-GaAs(100) junction independent of the growth sequence. Transitivity is satisfied by the zero (0.05±{}0.15 eV) sum of the core-energy separations for AlAs/Ge, GaAs/AlAs, and GaAs/Ge junctions. The band offsets for GaAs-AlAs are more evenly divided between valence and conduction band than the conventional 15--85 % distribution, respectively.
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Katnani et al. (1986) studied this question.
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