We report continuous-wave laser operation at 698 nm in Pr3+-doped LiYF4 crystal using an InGaN laser diode emitting at 444 nm with a maximum output power of 760 mW. By suppressing the oscillation at 640 and 721 nm, a maximum output power of 156 mW at 698 nm was obtained in a single transverse mode with a slope efficiency as high as 48.7%. The beam quality factors M2 in the x and y directions were measured to be 1.4 and 1.2, respectively.
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Liu et al. (2013) studied this question.
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