Schottky Gated Field Effect Transistors and Visible Electroluminescent Diodes Utilizing Poly(3-alkylthiophene)s

Fabrication and characteristics of Schottky gated field effect transistors (FETs) and visible electroluminescent (EL) diodes utilizing poly(3-alkylthiophene)s have been presented. The FETs show typical enhancement type metal-semiconductor FET characteristics. Large temperature dependence and gas-sensitivity have been found for poly(3-alkylthiophene) FETs. Visible red-orange poly(3-alkylthiophene) EL diodes have been successfully fabricated utilizing poly(3-alkylthiophene)s with long alkyl-side-chain. The emission intensity increases with increasing alkyl-side-chain length. Current-emission intensity characteristics show super-linear increase of the emission intensity with increasing injection current. Temperature dependence of emission intensity has been discussed. Camer mobility has also been evaluated from the pulse response of the emission.