Gate control of spin dynamics in III-V semiconductor quantum dots

We show that the g factor and the spin-flip time T₁ of a heterojunction quantum dot is very sensitive to the band-bending interface electric field even in the absence of wave-function penetration into the barrier. When this electric field is of the order of 10⁵V/cm, g and T₁ show high sensitivity to dot radius and magnetic field arising from the interplay between Rashba and Dresselhaus spin-orbit interactions. This result opens new possibilities for the design of a quantum dot spin quantum computer, where g factor and T₁ can be engineered by manipulating the spin-orbit coupling through external gates.