We show that scanning tunneling microscopy (STM) images of subsurface Mn atoms in GaAs are formed by hybridization of the impurity state with intrinsic surface states. They cannot be interpreted in terms of bulk-impurity wave-function imaging. Atomic-resolution images obtained using a low-temperature apparatus are compared with advanced, parameter-free tight-binding simulations accounting for both the buckled (110) surface and vacuum electronic properties. Splitting of the acceptor state due to buckling is shown to play a prominent role.
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Jancu et al. (2008) studied this question.
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