Quantitative surface diffusion coefficients in clustering systems are of crucial importance for thin film growth applications. In this letter we report the first determination of the activation energy for surface diffusion on the Stranski-Krastanov layer in a technological important heterosystem. The findings are based on previously published independent measurements of the activation energy for cluster growth and cluster formation from the free adatom concentration. For the Stranski-Krastanov layer thickness of Ge on Si(100) we obtain 3.08±0.16 monolayer equivalent coverage and for the activation energy of surface diffusion 0.84±0.14 eV.
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Zinke-Allmang et al. (1990) studied this question.
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