Low Temperature Hetero‐Epitaxial Growth of 3C‐SiC Films on Si Utilizing Microwave Plasma CVD

Microwave plasma (MW)CVD is used for the first time in the low‐temperature, hetero‐epitaxial growth of 3C‐SiC films on Si using a gas mixture of tetramethylsilane (TMS) and hydrogen. Good epitaxial matching between the 3C‐SiC film and Si substrate is obtained in the epitaxially grown 3C‐SiC films. Further investigation reveals that microwave powder density and substrate temperature play an important role in the determination of the orientation, SiC/Si interface structure, and morphology of 3C‐SiC films. The presented results show MWCVD might be a potent approach in the future in obtaining large‐scale, high‐quality, single‐crystalline 3C‐SiC films.