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Epitaxial n-type Hg0.7Cd0.3Te layers on (111)A CdTe substrates have been grown at 130 °C by laser-assisted deposition. Mobility and carrier concentration values at 77 K range from 4000 to 7000 cm2/Vs and 0.7 to 3×1016 cm−3, respectively. Films can be converted to p type after annealing at 410 °C. Implanted n+/p photodiodes have been demonstrated.
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J. T. Cheung (1983) studied this question.
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