ZnSe:Mn in AC thin film electroluminescence devices

The properties of ac driven thin film devices using ZnSe:Mn instead of ZnS:Mn as semiconductor layer are assessed. The principal advantage of low threshold is offset by inherent inefficiency of the temperature quenched Mn2+-emission in ZnSe. No hysteretic behaviour could be obtained in structures otherwise identical to hysteretic ZnS ac TFDs. A rather interesting inversion in runaway and carrier injection thresholds for ZnSe relative to ZnS devices can be supposed.