Large photoenhancement (by a factor of ≳100 in some devices) of electroluminescence in thin-film ZnS : Mn devices has been observed near and above the electroluminescence threshold effects when the devices were excited with the near-uv lines of an Ar+ laser. The intensity of the photoenhanced electroluminescence was found to have a sublinear dependence on the laser intensity, saturate, and then decrease with increased laser power.
No takes yet. Share an insight, caveat, or question.
Chang et al. (1978) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: