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The dependence of the lattice parameter on the free carrier concentration is calculated with the help of simple relations. The formulas contain only parameters experimentally available. The consideration of the electronic effects allows the determination of the lattice parameter variation of doped semiconductors and the estimation of the lattice strain in materials containing local free carrier differences. By means of charge-dependent ionic radii the substitution effect of doped semiconductors as well as deviations from the Vegard law for solid solution systems are explained.
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Pietsch et al. (1983) studied this question.
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