We report on a 5.4-mW ultra-low dc-power MOS LNA at 5.2 GHz, which is implemented based on 0.35-μm BiCMOS technology. The small-signal substrate resistance effect on the drain node of the common-source amplifiers is investigated. Also, the use of the floating method improves both the power gain and noise figure (NF) of MOS LNA. This amplifier achieves a Gain/NF × PDC ratio figure of merit of 0.402 (l/mW), which is the best reported at the 5-GHz band and is suitable for 5.2-GHz wireless LAN applications.
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Chen et al. (2005) studied this question.
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