Experiments on the temperature rise in cw-laser-irradiated silicon on sapphire

Experiments have been carried out to check the validity of calculated temperature distributions in cw-laser-irradiated silicon on sapphire. Both implanted and unimplanted samples were investigated. The implantations did not significantly change the temperature induced by the laser beam. At low laser scan velocities the agreement between the experiments and the calculations is good, but at high scan velocities the existing theoretical expressions are shown to be inadequate. Some of the problems involved in applying the calculations to an experimental situation are discussed.