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A magnetic tunnel junctions composed of room temperature ferromagnetic semiconductor rutile Ti1-xCoxO2-δand ferromagnetic metal Fe0.1Co0.9separated by AlOxbarrier showed positive tunneling magnetoresistance (TMR) with a ratio of ∼11% at 15 K, indicating that Ti1-xCoxO2-δcan be used as a spin injection electrode. The TMR decreased with increasing temperature and vanished above 180 K. TMR action at high temperature is likely prohibited by the inelastic tunneling conduction due to the low quality of the amorphous barrier layer and/or the junction interface.
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