Bismuth films formed by electrodeposition on n-GaAs (111) at 70°C are found to be single crystalline, (0001) oriented, with trigonal surface morphologies typical of high quality single crystals. Diode current-voltage characteristics display low reverse-bias leakage currents and average barrier heights of 0.77±0.02eV (n=1.07). A necessary requirement for single crystalline growth is the presence of ammonium sulfate in the electrolyte.
No takes yet. Share an insight, caveat, or question.
Bao et al. (2006) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:
More from Applied Physics Letters