Time dependent ballistic electron emission microscopy studies of a Au/(100)GaAs interface with a native oxide diffusion barrier

Ballistic electron emission microscopy (BEEM) has been used to investigate the effects of a thin interfacial native oxide layer on the electronic properties and stability of a Au/(100) n-GaAs contact as a function of time. The oxide had no effect on the electronic band structure at the interface measured with BEEM, as compared to similar contacts without a diffusion barrier. In addition, the oxide greatly enhanced the electrical homogeneity of the interface and prolonged the ability of the diode to transmit ballistic electrons to more than 35 days.