InGaN vertical microcavity light-emitting diodes (LEDs) with a Si-doped n-AlGaN/n-GaN distributed Bragg reflector (DBR) have been fabricated. With precise control of growth conditions, electrically conductive n-type DBRs with high reflectivity were obtained. An indium tin oxide (ITO) transparent p-contact was used in order to achieve efficient injection of holes. The emission peak width of the fabricated device was 3.6 nm, while the emission directionality was rather improved than conventional LEDs. These optical characteristics have obviously shown that microcavity effects are actually occurred in these LEDs.
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Arita et al. (2002) studied this question.
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