HfOx-based resistive random access memory with an active area down to few nanometers in diameter is fabricated and characterized. Scaling trends for forming and switching characteristics are presented. For the smallest device with an active area of few nanometers in diameter, ac switching endurance of 108cycles with more than 100 × resistance window is demonstrated. In addition, multiple resistance states are shown to be stable after 105read cycles and 105s baking at 150°C.
No takes yet. Share an insight, caveat, or question.
Zhang et al. (2013) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: