Far-infrared free-carrier data combined with Hall data yield the effective mass for an n-type HgTe-CdTe superlattice. The result, at 300 K and at a carrier concentration of 3.4×{}10¹⁶ cm^-3, is m*/m₀=0.030 in the superlattice plane, a value significantly different from effective masses in HgTe and CdTe and consistent with superlattice band-structure calculations. This result and semiconductorlike carrier freeze-out show that the individual layer properties are described by a semiconducting superlattice band structure.
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Perkowitz et al. (1987) studied this question.
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