Enhanced optically induced voltages have been observed across the junction of metal-barrier-metal point-contact diodes which exhibit a current-controlled negative differential resistance. Responsivities in excess of 5 V/W have been demonstrated when the incident optical beam is focused to ∼1 W/cm2 at the junction. This enhancement is in agreement with the behavior expected from the rectification of the optical field.
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Wang et al. (1974) studied this question.
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