The photocapacitance of a thin-film CdZnS/CuInSe2 heterojunction was observed under white light excitation. Capacitance increases were observed that were indicative of minority-carrier trapping in the junction. Emission spectroscopy indicated that a distribution of traps produce this signal. Analysis of the data indicate trap distributions ranging from 5×1014 cm−3 to 1.6×1015 cm−3 in the bulk and 3.3×1011 cm−2 at the surface. Photovoltaic efficiency was inversely related to the photocapacitance signal. A model relates deep electron interface states to a decrease in open-circuit voltage.
No takes yet. Share an insight, caveat, or question.
R. K. Ahrenkiel (1986) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: